Specific heat capacity and hemispherical total emissivity of liquid Si measured in electrostatic levitation

Containerless solidification of Si was carried out via electrostatic levitation. Typical undercooling up to 370 K, which is 0.22 of its melting temperature, was obtained. A t(T) function in a time-temperature profile was analytically determined from radiative cooling curves measured during containerless solidification. With the analytical t(T) function, the ratio of constant pressure specific heat capacity to hemispherical total emissivity c(P)(T)/epsilon(T)(T) was estimated. c(P)(T) and epsilon(T)(T) were further derived to describe the temperature-dependent cooling behavior of liquid Si during containerless solidification in electrostatic levitation, which can be expressed as c(P)(drv)(T)=3R+4.8x10(-4).T+4.157x10(5).T-2-1.002x10(-7).T-2 (J/mol K) and epsilon(T)(drv)(T)=0.267-5.615x10(-5).T+9.133x10(-9).T-2, respectively. (C) 2003 American Institute of Physics.