Characterization of tantalum nitride films deposited by reactive sputtering of Ta in N2/Ar gas mixtures

被引：71

作者：

Lee, WH ^{[1
]}

Lin, JC ^{[1
]}

Lee, CP ^{[1
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei 10607, Taiwan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2001年 / 68卷 / 1-3期

关键词：

tantalum nitride; reactive sputtering; diffusion barrier;

D O I：

10.1016/S0254-0584(00)00370-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tantalum nitride (TaN) films are deposited on silicon substrates by radio frequency (RF) reactive sputtering of Ta in N-2/Ar gas mixtures at a bias of 0 V. The deposition rate, chemical composition, and crystalline microstructure are investigated by cross-sectional transmission electron microscopy (XTEM), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), and atomic force microscopy (AFM), respectively. According to those results, the deposition rate, film composition, and microstructure correlate with the N-2/Ar flow ratio. In addition, the deposition mechanism which controls the film characteristics is presented as well. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：266 / 271

页数：6

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