Band gap of amorphous and well-ordered Al2O3 on Ni3Al(100)

被引：129

作者：

Costina, I ^{[1
]}

Franchy, R ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Schicht & Grenzflachen ISG3, D-52425 Julich, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 26期

关键词：

D O I：

10.1063/1.1380403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The vibrational and electronic properties of amorphous and well-ordered alumina formed on Ni3Al(100) were investigated using high-resolution electron energy loss spectroscopy. The structure of well-ordered alumina was analyzed by low-energy electron diffraction. The amorphous Al2O3 films are prepared by adsorption of O-2 at room temperature, while the well-ordered Al2O3 are obtained by direct oxidation of Ni3Al at 1150 K. The band gap energy is similar to3.2 and similar to4.3 eV for amorphous alumina and well-ordered alumina thin films respectively. The lowering of the band gap with respect to the bulk value of Al2O3 is associated with defect-induced states located in the band gap. (C) 2001 American Institute of Physics.

引用

页码：4139 / 4141

页数：3

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