Pseudo-donors in SiC

被引：3

作者：

Egilsson, T ^{[1
]}

Ivanov, IG

Henry, A

Janzén, E

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

[2] ABB Corp Res, SE-72178 Vasteras, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

bound excitons; defects; photoluminescence;

D O I：

10.4028/www.scientific.net/MSF.338-342.647

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the properties of two well known bound excitons (BE) in silicon carbide, the D-1-BE and a hydrogen related BE, here called the II-BE. We find that in both cases the BE may be regarded as a pseudo-donor, a strongly localised hole serving as the positive core. In order to study the donor-like states of the BE, we use photoluminescence excitation (PLE) spectroscopy. Where possible, we have compared our results with the predictions of effective-mass-theory.

引用

页码：647 / 650

页数：4

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