Conditions of elaboration of luminescent porous silicon from hydrogenated amorphous silicon

被引：31

作者：

Wehrspohn, RB

Chazalviel, JN

Ozanam, F

Solomon, I

机构：

[1] Centre National de la Recherche Scientifique, École Polytechnique, Laboratoire de Physique de la Matière Condensée, Palaiseau Cedex

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.77.1885

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a systematic study of the preparation and properties of porous silicon obtained by anodic etching of device-grade hydrogenated amorphous silicon. Highly luminescent porous material is produced from boron-doped films and, by hole injection, from undoped films. A striking difference between amorphous and crystalline Si lies in an electrochemical instability which limits the maximum obtainable thickness in porous material. The luminescence mechanism for porous a-Si:H appears to be markedly different from that of its crystalline counterpart.

引用

页码：1885 / 1888

页数：4

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