VISIBLE PHOTOLUMINESCENCE FROM POROUS SI FORMED BY ANNEALING AND CHEMICALLY ETCHING AMORPHOUS SI

被引：27

作者：

JUNG, KH ^{[1
]}

SHIH, S ^{[1
]}

KWONG, DL ^{[1
]}

CHO, CC ^{[1
]}

GNADE, BE ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC, DALLAS, TX 75265 USA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 20期

关键词：

D O I：

10.1063/1.108154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the visible photoluminescence (PL) and microstructure of amorphous Si (a-Si) after annealing and etching. The a-Si layers were grown on (100)Si substrates and partially crystallized by annealing between 550-1150-degrees-C. Porous Si layers (PSLs) were then produced by etching in HF-HNO3. While no visible PL was observed from unannealed and etched a-Si, visible PL was detected after annealing and etching. The observation of visible PL after etching coincided with the observation of Si microcrystallites in the annealed layer. The results suggest that an initial crystalline structure is important for fabricating luminescent PSLs.

引用

页码：2467 / 2469

页数：3

共 17 条

[1] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].