Effect of annealing on fatigue properties of Sb-doped lead zirconate titanate thin films deposited by DC reactive sputtering

被引：6

作者：

Choi, WY ^{[1
]}

Kim, HG ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Yusong Gu, Taejon 305701, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 1A期

关键词：

lead zirconate titanate; PZT; Sb-doped; grain site; annealing; fatigue;

D O I：

10.1143/JJAP.38.122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of annealing an the ferroelectric properties of Pt-based thin film capacitors of Sb-doped lead zirconate titanate [Pt/Pb(Zr0.48Ti0.52)O-3/Pt/SiO2/Si] were investigated. Undoped Pb(Zr0.48Ti0.52)O-3 (PZT0) and Sb-doped Pb(Zr0.48Ti0.52)O-3 (PZST07) thin films were annealed in oxygen atmosphere at 650 degrees C for 30 min. The Sb cation in a PZT thin Nm before and after annealing was confirmed to be trivalent (Sb3+) by X-ray photoelectron spectroscopy (XPS). The grain sizes of undoped PZT(PZT0) and Sb-doped PZT (PZST07) thin films after annealing are seen to increase. These changes of grain size affect the fatigue properties of PZT thin films. Annealed Sb-doped PZT (PZST07) thin films show good fatigue behavior (fatigue free up to 10(11) switching cycles) and a larger P-r*- P-r(boolean AND) value (31 mu C/cm(2)) than SrBi2Ta2O9 (SBT) thin films.

引用

页码：122 / 126

页数：5

共 20 条

[1] DIELECTRIC-PROPERTIES OF (111)LEAD AND (100)LEAD ZIRCONATE-TITANATE FILMS PREPARED BY SOL-GEL TECHNIQUE [J].

AOKI, K ;

FUKUDA, Y ;

NUMATA, K ;

NISHIMURA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5155-5158

[2] HIGH-ENERGY PHOTOELECTRON-SPECTROSCOPY OF SOME ANTIMONY COMPOUNDS [J].

BIRCHALL, T ;

CONNOR, JA ;

HILLIER, IH .

JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS, 1975, (20) :2003-2006

[3] EFFECTS OF DOPANTS IN PZT FILMS [J].

CHANG, JF ;

DESU, SB .

JOURNAL OF MATERIALS RESEARCH, 1994, 9 (04) :955-969

[4] Phase formations and electrical properties of doped-PZT/PbTiO3 films deposited by reactive sputtering using multi-targets [J].

Choi, GP ;

Ahn, JH ;

Lee, WJ ;

Sung, TH ;

Kim, HG .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 41 (01) :16-22

[5]

CHOI WY, 1998, IN PRESS MAT LETT

[6]

CHOI WY, UNPUB APPL PHYS LETT

[7]

CHOI WY, 1998, IN PRESS INTEGRAT FE

[8] DOPANT DISTRIBUTION BETWEEN A AND B SITES IN PZT CERAMICS OF TYPE-ABO3 [J].

GONNARD, P ;

TROCCAZ, M .

JOURNAL OF SOLID STATE CHEMISTRY, 1978, 23 (3-4) :321-326

[9]

ICHINOSE MN, 1994, JPN J APPL PHYS, V33, P5223

[10] EFFECT OF NB DOPING ON THE MICROSTRUCTURE OF SOL-GEL-DERIVED PZT THIN-FILMS [J].

KLISSURSKA, RD ;

BROOKS, KG ;

REANEY, IM ;

PAWLACZYK, C ;

KOSEC, M ;

SETTER, N .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1995, 78 (06) :1513-1520

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