Electronic properties of ion irradiated amorphous carbon films prepared by plasma assisted CVD method

被引：5

作者：

Bhattacharyya, S ^{[1
]}

Kanjilal, D ^{[1
]}

Sayeed, A ^{[1
]}

Meenakshi, V ^{[1
]}

Subramanyam, SV ^{[1
]}

机构：

[1] CTR NUCL SCI,NEW DELHI 110001,INDIA

来源：

VACUUM | 1996年 / 47卷 / 11期

关键词：

D O I：

10.1016/S0042-207X(96)00171-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous hydrogenated carbon films were prepared by plasma assisted CVD method. Their de conductivity was studied as a function of temperature in the range of 300 K to 10 K. Films were then subjected to high energy (170 MeV) ion irradiation. After irradiation a marked change was observed in the conductivity and its temperature dependence. The conductivity decreased by 2-3 orders of magnitude and a gap appeared in the electronic structure. UPS studies of the material show a decrease in the pi states of the electronic density of states spectrum. A change in the C1s peak shape was observed in XPS study of the irradiated carbon film. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：1285 / 1288

页数：4

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