On the driving forces for the vertical alignment in nitride quantum dot multilayers

被引：15

作者：

Chamard, V

Metzger, TH

Sztucki, M

Holy, V

Tolan, M

Bellet-Amalric, E

Adelmann, C

Daudin, B

Mariette, H

机构：

[1] European Synchrotron Radiat Facil, F-38043 Grenoble, France

[2] Univ Dortmund, D-44221 Dortmund, Germany

[3] Masaryk Univ, Inst Condensed Matter Phys, CS-61137 Brno, Czech Republic

[4] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, CEA CNRS Grp Nanophys & Semicond, F-38054 Grenoble 9, France

来源：

EUROPHYSICS LETTERS | 2003年 / 63卷 / 02期

关键词：

D O I：

10.1209/epl/i2003-00513-x

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The layer-to-layer vertical alignment of GaN quantum dots in AlN multilayers is quantified as a function of the spacer layer thickness and the number of bilayers, using grazing-incidence X-ray scattering. Although the density of dots is comparable to the density of (0001) threading dislocations, we observe that the strong vertical ordering is strain induced by the buried dots. Elasticity theory calculations confirm this experimental result and explain the observation of the exceptionally strong vertical alignment in nitride compared to other classical systems.

引用

页码：268 / 274

页数：7

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