Structure and ordering of GaN quantum dot multilayers

被引：31

作者：

Chamard, V

Metzger, TH

Bellet-Amalric, E

Daudin, B

Adelmann, C

Mariette, H

Mula, G

机构：

[1] European Synchrotron Radiat Facil, F-38043 Grenoble, France

[2] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, CNRS Grp, F-38054 Grenoble 9, France

[3] Univ Grenoble 1, Spectrometrie Phys Lab, CNRS, UMR 5588, F-38402 St Martin Dheres, France

[4] INFM, I-09042 Cagliari, Italy

[5] Dipartimento Fis, I-09042 Cagliari, Italy

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 13期

关键词：

D O I：

10.1063/1.1403657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Grazing incidence x-ray techniques are used to characterize the structure of multilayered GaN quantum dots in an AlN matrix. For a dot lateral size of 170 Angstrom, the values of the interdot vertical and lateral correlation lengths are 1500 and 250 Angstrom, respectively. The presence of smaller quantum dots is observed only in the layers deposited first. The strain distribution in the multilayer is also investigated as a function of depth. Along the dot columns, the crystal lattice remains coherent, with elastic relaxation from the bottom to the top of the multilayer. (C) 2001 American Institute of Physics.

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页码：1971 / 1973

页数：3

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