Synthesis and structural properties of Al-C-N-O composite thin films

被引：17

作者：

Ning, J ^{[1
]}

Xu, S ^{[1
]}

Ostrikov, KN ^{[1
]}

Chai, JW ^{[1
]}

Li, YN ^{[1
]}

Ling, KM ^{[1
]}

Lee, S ^{[1
]}

机构：

[1] Nanyang Technol Univ, NIE, Plasma Proc Lab, Singapore 637616, Singapore

来源：

THIN SOLID FILMS | 2001年 / 385卷 / 1-2期

关键词：

aluminum nitride; nanostructures; annealing; plasma processing; deposition;

D O I：

10.1016/S0040-6090(00)01923-4

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

Al-C-N-O composite thin films have been synthesized by radio frequency reactive diode sputtering of an aluminum target in plasmas of N-2 + O-2 + CH, gas mixtures. The chemical structure and composition of the films have been investigated by means of infrared and X-ray photoelectron spectroscopy. The results reveal the formation of C-N, Al-C, Al-N and Al-O bonds. The X-ray diffraction pattern suggests that the films are of nanometer composite material and contain predominately crystalline grains of hexagonal AlN and alpha -Al2O3. A good thermal stability of the composite has been confirmed by the annealing treatment at temperatures up to 600 degreesC. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：55 / 60

页数：6

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