Effects of C/Si ratio in chemical vapor deposition of 4H-SiC(11(2)over-bar0) and (03(3)over-bar8)

被引：32

作者：

Kimoto, T ^{[1
]}

Hashimoto, K ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Comp Sci & Elect Engn, Kyoto 6158510, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 12期

关键词：

silicon carbide; chemical vapor deposition; purity; deep level; non-basal plane;

D O I：

10.1143/JJAP.42.7294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Homoepitaxial growth of 4H-SiC(1120) and (0338) by hot-wall chemical vapor deposition has been investigated. Both the residual-donor concentration and deep-level concentrations can be reduced by increasing the C/Si ratio during growth. The optimum C/Si ratio for obtaining high-quality epilayers with good morphology is higher on the non-basal planes than,on off-axis (0001). The correlation between deep levels and growth condition is discussed.

引用

页码：7294 / 7295

页数：2

共 22 条

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[3]

2-0

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