Carrier mobility in pentacene as a function of grain size and orientation derived from scanning transmission X-ray microscopy

被引：22

作者：

Braeuer, Bjoern ^{[1
]}

Kukreja, Roopali ^{[1
]}

Virkar, Ajay ^{[2
]}

Akkerman, Hylke B. ^{[2
]}

Fognini, Andreas ^{[4
]}

Tyliszczak, Tolek ^{[3
]}

Bao, Zhenan ^{[2
]}

机构：

[1] Stanford Univ, Stanford Inst Mat & Energy Sci, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

[3] Adv Light Source, Berkeley, CA 94720 USA

[4] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland

来源：

ORGANIC ELECTRONICS | 2011年 / 12卷 / 11期

关键词：

X-ray microscopy; Pentacene; STXM; Grain; FIELD-EFFECT TRANSISTORS; MAGNETIC-PROPERTIES; THIN-FILMS; SPECTROMICROSCOPY; TRANSPORT;

D O I：

10.1016/j.orgel.2011.08.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pentacene field-effect transistors were prepared on silicon nitride membranes for scanning transmission X-ray microscopy (STXM) investigations. The membranes were modified by different self-assembled monolayers (SAMs). Pentacene was deposited atop the SAM-treated membrane and the in-plane orientation of the grains were subsequently investigated by polarization dependent STXM measurements. The grain sizes were determined and compared to those obtained from atomic force microscopy (AFM) measurements. Statistical analysis of the grain orientation was correlated with the charge carrier mobility of the films, in which we observed an increase in the mobility with increasing grain size and decreasing surface roughness of the SAM. Published by Elsevier B.V.

引用

页码：1936 / 1942

页数：7

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