A numerical and experimental study on gap compensation and wavelength selection in UV-lithography of ultra-high aspect ratio SU-8 microstructures
被引:103
作者:
Yang, R
论文数: 0引用数: 0
h-index: 0
机构:
Louisiana State Univ, Dept Mech Engn, Baton Rouge, LA 70803 USALouisiana State Univ, Dept Mech Engn, Baton Rouge, LA 70803 USA
Yang, R
[1
]
Wang, WJ
论文数: 0引用数: 0
h-index: 0
机构:
Louisiana State Univ, Dept Mech Engn, Baton Rouge, LA 70803 USALouisiana State Univ, Dept Mech Engn, Baton Rouge, LA 70803 USA
Wang, WJ
[1
]
机构:
[1] Louisiana State Univ, Dept Mech Engn, Baton Rouge, LA 70803 USA
来源:
SENSORS AND ACTUATORS B-CHEMICAL
|
2005年
/
110卷
/
02期
基金:
美国国家科学基金会;
关键词:
Cargille refractive index matching liquid;
ultra-thick SU-8 resist;
diffraction;
high aspect ratio;
UV-lithography;
MEMS;
D O I:
10.1016/j.snb.2005.02.006
中图分类号:
O65 [分析化学];
学科分类号:
070302 ;
081704 ;
摘要:
This paper presents a study on UV-lithography of thick SU-8 resist using air gap compensation and optimal wavelength selection for ultra-high aspect ratio microstructures. Both numerical simulations and experiments were conducted to study effects of different lithography conditions: broadband light source with and without air gap compensation, filtered light source with glycerol liquid, and filtered light source with Cargille refractive index matching liquid. A thick PMMA sheet was used as an optical filter to eliminate most of the i-line components of a broadband light source. Using the filtered light Source and gap compensation with the Cargille refractive index liquid perfectly matching that of SU-8, patterns with feature sizes of 6 mu m thick, 1150 mu m tall (aspect ratio of more than 190: 1) and high quality sidewalls were obtained. Microstructures with height up to 2 mm and good sidewall quality were also obtained and presented. The study also proved that Cargille refractive index matching liquid is compatible with UV-lithography of SU-8 and may be used as an effective air gap compensation solution. (C) 2005 Elsevier B.V. All rights reserved.