Optical spectroscopy of a single Al0.36In0.64As/Al0.33Ga0.67As quantum dot -: art. no. 075314

被引:39
作者
Hinzer, K [1 ]
Hawrylak, P
Korkusinski, M
Fafard, S
Bayer, M
Stern, O
Gorbunov, A
Forchel, A
机构
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[2] Univ Ottawa, Dept Phys, Ottawa, ON K1A 6N5, Canada
[3] Univ Wurzburg, D-97074 Wurzburg, Germany
[4] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
关键词
D O I
10.1103/PhysRevB.63.075314
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report results of interband spectroscopy of a single Al0.36In0.64As/Al0.33Ga0.67As self-assembled quantum dot. The single dot spectroscopy has been carried out at low temperature as a function of the excitation power and magnetic field up to 8 T. The emission spectra as a function of excitation power show two distinct groups of transitions that we associate with the recombination from ground and excited quantum dot levels with a spacing of similar to 70 meV. The application of magnetic field allows us to identify the exciton emission as well as the emission from the biexciton, and charged exciton complexes with binding energies of similar to5 meV. The binding energies compare favorably with results of calculations.
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页数:6
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共 38 条
  • [1] Exciton complexes in InxGa1-xAs/GaAs quantum dots
    Bayer, M
    Gutbrod, T
    Forchel, A
    Kulakovskii, VD
    Gorbunov, A
    Michel, M
    Steffen, R
    Wang, KH
    [J]. PHYSICAL REVIEW B, 1998, 58 (08): : 4740 - 4753
  • [2] Hidden symmetries in the energy levels of excitonic 'artificial atoms'
    Bayer, M
    Stern, O
    Hawrylak, P
    Fafard, S
    Forchel, A
    [J]. NATURE, 2000, 405 (6789) : 923 - 926
  • [3] Electron and hole g factors and exchange interaction from studies of the exciton fine structure in In0.60Ga0.40As quantum dots
    Bayer, M
    Kuther, A
    Forchel, A
    Gorbunov, A
    Timofeev, VB
    Schäfer, F
    Reithmaier, JP
    Reinecke, TL
    Walck, SN
    [J]. PHYSICAL REVIEW LETTERS, 1999, 82 (08) : 1748 - 1751
  • [4] Multiexciton spectroscopy of a single self-assembled quantum dot
    Dekel, E
    Gershoni, D
    Ehrenfreund, E
    Spektor, D
    Garcia, JM
    Petroff, PM
    [J]. PHYSICAL REVIEW LETTERS, 1998, 80 (22) : 4991 - 4994
  • [5] VISIBLE PHOTOLUMINESCENCE FROM N-DOT ENSEMBLES AND THE LINEWIDTH OF ULTRASMALL ALYIN1-YAS ALXGA1-XAS QUANTUM DOTS
    FAFARD, S
    LEON, R
    LEONARD, D
    MERZ, JL
    PETROFF, PM
    [J]. PHYSICAL REVIEW B, 1994, 50 (11): : 8086 - 8089
  • [6] Red-emitting semiconductor quantum dot lasers
    Fafard, S
    Hinzer, K
    Raymond, S
    Dion, M
    McCaffrey, J
    Feng, Y
    Charbonneau, S
    [J]. SCIENCE, 1996, 274 (5291) : 1350 - 1353
  • [7] Quantum dot devices
    Fafard, S
    Liu, HC
    Wasilewski, ZR
    McCaffrey, J
    Spanner, M
    Raymond, S
    Allen, CN
    Hinzer, K
    Lapointe, J
    Struby, C
    Gao, M
    Hawrylak, P
    Gould, C
    Sachrajda, A
    Zawadzki, P
    [J]. OPTOELECTRONIC MATERIALS AND DEVICES II, 2000, 4078 : 100 - 114
  • [8] Manipulating the energy levels of semiconductor quantum dots
    Fafard, S
    Wasilewski, ZR
    Allen, CN
    Picard, D
    Spanner, M
    McCaffrey, JP
    Piva, PG
    [J]. PHYSICAL REVIEW B, 1999, 59 (23): : 15368 - 15373
  • [9] FAFARD S, 1994, NANOSTRUCTURES QUANT, P225
  • [10] Optical spectroscopy on a single InGaAs/GaAs quantum dot in the few-exciton limit
    Findeis, F
    Zrenner, A
    Böhm, G
    Abstreiter, G
    [J]. SOLID STATE COMMUNICATIONS, 2000, 114 (04) : 227 - 230