Optical spectroscopy on a single InGaAs/GaAs quantum dot in the few-exciton limit

被引:52
作者
Findeis, F [1 ]
Zrenner, A [1 ]
Böhm, G [1 ]
Abstreiter, G [1 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
关键词
semiconductors; nanostructures; optical properties; luminescence;
D O I
10.1016/S0038-1098(00)00019-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using near field spectroscopy through an electron beam written shadow mask we have isolated a single self-assembled InGaAs quantum dot and performed magneto-optical experiments. In a power-dependent low-temperature photoluminescence study we have investigated the influence of few particle interactions on the emission spectra for increasing exciton occupation numbers. Contributions from different shells have been observed and assigned by magneto-photoluminescence experiments. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:227 / 230
页数:4
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