X-ray scattering studies on InGaAs quantum dots

被引：11

作者：

Hsu, CH

Lee, HY

Hsieh, YW

Stetsko, YP

Tang, MT

Liang, KS

Yeh, NT

Chyi, JI

Noh, DY

机构：

[1] Natl Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan

[2] Natl Cent Univ, Dept Elect Engn, Chungli 320, Taiwan

[3] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 506712, South Korea

来源：

PHYSICA B-CONDENSED MATTER | 2003年 / 336卷 / 1-2期

关键词：

X-ray scattering; quantum dots;

D O I：

10.1016/S0921-4526(03)00276-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present a structural investigation of self-assembled InGaAs quantum dots on GaAS(0 0 1) substrates grown by molecular-beam epitaxy. The grazing incidence X-ray scattering measurements were performed at BL17B of Taiwan Light Source and BL12B2 of SPring-8. The strain field, composition distribution, and shape of the dots are determined. We found that In concentration was less than the nominal composition, 50% near the dot/substrate interface and exceeded 50% near the top of the dots, indicating In surface segregation. In addition, the relation between the strain and the composition did not obey Vegard's law. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：98 / 102

页数：5

共 7 条

[1] Formation of self-organized In0.5Ga0.5As quantum dots on GaAs by molecular beam epitaxy [J].