Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots

被引：213

作者：

Kegel, I ^{[1
]}

Metzger, TH

Lorke, A

Peisl, J

Stangl, J

Bauer, G

García, JM

Petroff, PM

机构：

[1] Univ Munich, CeNS, Sekt Phys, D-80359 Munich, Germany

[2] Johannes Kepler Univ Linz, Inst Halbleiterphys, A-4040 Linz, Austria

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.85.1694

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Tomographic nanometer-scale images of self-assembled InAs/GaAs quantum dots have been obtained from surface-sensitive x-ray diffraction. Based on the three-dimensional intensity mapping of selected regions in reciprocal space, the method yields the shape of the dots along with the lattice parameter distribution and the vertical interdiffusion profile on a subnanometer scale. The material composition is found to vary continuously from GaAs at the base of the dot to InAs at the top.

引用

页码：1694 / 1697

页数：4

共 25 条

[1] Semiconductor clusters, nanocrystals, and quantum dots
Alivisatos, AP
[J]. SCIENCE, 1996, 271 (5251) : 933 - 937
[2] [Anonymous], 1998, MRS B, V23
[3] Bimberg D., 1999, QUANTUM DOT HETEROST
[4] Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots
Eisele, H
Flebbe, O
Kalka, T
Preinesberger, C
Heinrichsdorff, F
Krost, A
Bimberg, D
Dähne-Prietsch, M
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (01) : 106 - 108
[5] Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots
Fry, PW
Itskevich, IE
Mowbray, DJ
Skolnick, MS
Finley, JJ
Barker, JA
O'Reilly, EP
Wilson, LR
Larkin, IA
Maksym, PA
Hopkinson, M
Al-Khafaji, M
David, JPR
Cullis, AG
Hill, G
Clark, JC
[J]. PHYSICAL REVIEW LETTERS, 2000, 84 (04) : 733 - 736
[6] Intermixing and shape changes during the formation of InAs self-assembled quantum dots
García, JM
MedeirosRibeiro, G
Schmidt, K
Ngo, T
Feng, JL
Lorke, A
Kotthaus, J
Petroff, PM
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (14) : 2014 - 2016
[7] Surface segregation in (Ga,In)As/GaAs quantum boxes
Grandjean, N
Massies, J
Tottereau, O
[J]. PHYSICAL REVIEW B, 1997, 55 (16): : 10189 - 10192
[8] ONSET OF INCOHERENCY AND DEFECT INTRODUCTION IN THE INITIAL-STAGES OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(100)
GUHA, S
MADHUKAR, A
RAJKUMAR, KC
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (20) : 2110 - 2112
[9] Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying
Joyce, PB
Krzyzewski, TJ
Bell, GR
Joyce, BA
Jones, TS
[J]. PHYSICAL REVIEW B, 1998, 58 (24) : 15981 - 15984
[10] Quantum dots - Controlling artificial atoms
Julien, FH
Alexandrou, A
[J]. SCIENCE, 1998, 282 (5393) : 1429 - 1430

← 1 2 3 →