Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying

被引：315

作者：

Joyce, PB

Krzyzewski, TJ

Bell, GR

Joyce, BA

Jones, TS ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Interdisciplinary Res Ctr Semicond Mat, London SW7 2AY, England

[2] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AY, England

[3] Univ London Imperial Coll Sci Technol & Med, Interdisciplinary Res Ctr Semicond Mat, London SW7 2AB, England

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.58.R15981

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy has been used to study the growth by molecular beam epitaxy of InAs quantum dots (QD's) on GaAs(001), with specific emphasis on measuring the volume of the dots at different temperatures as a function of InAs deposition. At low temperatures (similar to 350 degrees C), the total QD volume is consistent with a classic Stranski-Krastanov mechanism since it is equal to the additional amount of InAs deposited after the two-dimensional (2D)-->3D growth mode transition. By contrast, high substrate tempera tuns (>420 degrees C) result in QD's with a much greater volume, and the implication is that significant mass transport occurs to the dots from both the wetting layer and the substrate. The dots must contain both In and Ga and therefore the description of InAs/GaAs(001) QD formation as a classical Stranski-Krastanov growth process is incorrect. [S0163-1829(98)50448-1].

引用

页码：15981 / 15984

页数：4

共 23 条

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