Island size scaling in InAs/GaAs self-assembled quantum dots

被引:79
作者
Ebiko, Y
Muto, S
Suzuki, D
Itoh, S
Shiramine, K
Haga, T
Nakata, Y
Yokoyama, N
机构
[1] Hokkaido Univ, Dept Appl Phys, Kita Ku, Sapporo, Hokkaido 060, Japan
[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan
关键词
D O I
10.1103/PhysRevLett.80.2650
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We studied the cluster size distribution of dislocation-free InAs/GaAs self-assembled quantum dots obtained by the Stranski-Krastanow mode of molecular beam epitaxy. The same scaling function was obtained over a wide range of dot density. The scaling function indicated that the cluster size fluctuation, normalized by the average size, is constant for all the quantum dot densities studied. The resemblance of the scaling function to that of the submonolayer homoepitaxial growth implies that the strain is not the essential factor determining the cluster size distribution of quantum dots.
引用
收藏
页码:2650 / 2653
页数:4
相关论文
共 16 条
  • [1] CRITICAL CLUSTER-SIZE - ISLAND MORPHOLOGY AND SIZE DISTRIBUTION IN SUBMONOLAYER EPITAXIAL-GROWTH
    AMAR, JG
    FAMILY, F
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (11) : 2066 - 2069
  • [2] BARABASHI AL, 1995, FRACTAL CONCEPTS SUR, P178
  • [3] Barabasi AL, 1997, APPL PHYS LETT, V70, P2565, DOI 10.1063/1.118920
  • [4] SCALING ANALYSIS OF DIFFUSION-MEDIATED ISLAND GROWTH IN SURFACE-ADSORPTION PROCESSES
    BARTELT, MC
    EVANS, JW
    [J]. PHYSICAL REVIEW B, 1992, 46 (19): : 12675 - 12687
  • [5] ISLAND SCALING IN STRAINED HETEROEPITAXY - INAS/GAAS(001)
    BRESSLERHILL, V
    VARMA, S
    LORKE, A
    NOSHO, BZ
    PETROFF, PM
    WEINBERG, WH
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (16) : 3209 - 3212
  • [6] Structural transition in large-lattice-mismatch heteroepitaxy
    Chen, Y
    Washburn, J
    [J]. PHYSICAL REVIEW LETTERS, 1996, 77 (19) : 4046 - 4049
  • [7] In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)
    Kobayashi, NP
    Ramachandran, TR
    Chen, P
    Madhukar, A
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (23) : 3299 - 3301
  • [8] MICROSTRUCTURAL EVOLUTION DURING THE HETEROEPITAXY OF GE ON VICINAL SI(100)
    KRISHNAMURTHY, M
    DRUCKER, JS
    VENABLES, JA
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (09) : 6461 - 6471
  • [9] CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS
    LEONARD, D
    POND, K
    PETROFF, PM
    [J]. PHYSICAL REVIEW B, 1994, 50 (16): : 11687 - 11692
  • [10] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES
    LEONARD, D
    KRISHNAMURTHY, M
    REAVES, CM
    DENBAARS, SP
    PETROFF, PM
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (23) : 3203 - 3205