First demonstration of GaAs CMOS

被引：7

作者：

Hong, M ^{[1
]}

Baillargeon, JN ^{[1
]}

Kwo, J ^{[1
]}

Mannaerts, JP ^{[1
]}

Cho, AY ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 2000年

关键词：

D O I：

10.1109/ISCS.2000.947180

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using Ga2O3(Gd2O3) as a gate dielectric and conventional ion implantation for source, drain, and isolation, we have fabricated and demonstrated a GaAs complementary metal-oxide-semiconductor field-effect-transistor (CMOS) inverter.

引用

页码：345 / 350

页数：6

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