Resonant Raman scattering in self-organized InAs/GaAs quantum dots

被引：36

作者：

Heitz, R ^{[1
]}

Born, H

Hoffmann, A

Bimberg, D

Mukhametzhanov, I

Madhukar, A

机构：

[1] Tech Univ Berlin, Inst Festkorperforsch, D-10623 Berlin, Germany

[2] Univ So Calif, Photon Mat & Devices Lab, Los Angeles, CA 90089 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 23期

关键词：

D O I：

10.1063/1.1329321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The exciton-phonon coupling in self-organized InAs/GaAs quantum dots (QDs) is investigated under resonant excitation of the ground-state transition. First- and second-order phonon sidebands of the TO (30.3 meV) and LO (33.2 meV) modes of the strained InAs QDs as well as an interface (35.9 meV) mode are resolved. Huang-Rhys factors of 0.012, 0.026, and 0.006, respectively, indicate enhanced polar exciton-phonon coupling in such strained low-symmetry QDs. Time-resolved measurements support the local character of the phonon modes. (C) 2000 American Institute of Physics. [S0003-6951(00)04448-X].

引用

页码：3746 / 3748

页数：3

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