A matrix formulation of magnetoresistance for an arbitrary J-fold multicarrier semiconductor system via the reduced-conductivity-tensor scheme in the nonquantizing regime

被引:7
作者
Kim, JS [1 ]
机构
[1] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA
关键词
D O I
10.1063/1.368026
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this article, a matrix formulation of magnetoresistance in semiconductors is presented for an arbitrary J-fold multicarrier system which is based on the reduced-conductivity-tensor scheme and applicable in the nonquantizing regime where Landau orbital quantization is negligible. In the formalism, a unique expression of the magnetoresistance is deduced in terms of two vectors which depend on the carrier densities and mobilities, and three matrices which represent various inter-carrier couplings under the applied magnetic field. In particular, the mobility-difference matrix plays a key role, and its simple form strongly suggests a two-carrier model of magnetoresistance for a narrow continuum distribution. Explicit closed-form formulas of magnetoresistance are derived for the two-carrier (J=2) and three-carrier (J=3) systems as special cases of the general formalism. The field dependence and asymptotic behavior of the magnetoresistance are also discussed, and a two-carrier model of magnetoresistance is formally proposed. (C) 1998 American Institute of Physics.
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页码:292 / 300
页数:9
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