ELECTRICAL-PROPERTIES OF MODULATION-DOPED HGTE-CDTE SUPERLATTICES

被引：18

作者：

HWANG, S

LANSARI, Y

YANG, Z

COOK, JW

SCHETZINA, JF

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 03期

关键词：

D O I：

10.1116/1.585802

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Growth of modulation-doped HgTe-CdTe superlattices (SLs) at very low temperatures (140-degrees-C) by photassisted molecular beam epitaxy is reported. SL layer thicknesses were intentionally chosen such that most of the SLs studied are inverted-band semimetals or inverted-band semiconductors. Both p- and n-type samples were successfully prepared and studied. The doped superlattices exhibited excellent electrical properties. Lack of carrier freeze-out at low temperatures provides convincing evidence that modulation-doping has been achieved.

引用

收藏

页码：1799 / 1804

页数：6

相关论文

共 20 条

[1] DETERMINATION OF HETEROJUNCTION MOBILITIES USING A NOVEL MAGNETIC FIELD-DEPENDENT HALL TECHNIQUE [J].

BECK, WA ;

WILSON, RA ;

GOLDBERG, AC .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :136-143

[2] ANALYSIS OF MULTIBAND CONDUCTION IN HGTE BY MAGNETIC-FIELD-DEPENDENT HALL TECHNIQUES [J].

BECK, WA ;

CROWNE, F ;

ANDERSON, JR ;

GORSKA, M ;

DZIUBA, Z .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (04) :2772-2774

[3] DETERMINATION OF ELECTRICAL TRANSPORT-PROPERTIES USING A NOVEL MAGNETIC FIELD-DEPENDENT HALL TECHNIQUE [J].

BECK, WA ;

ANDERSON, JR .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :541-544

[4]

Beer A. C., 1963, GALVANOMAGNETIC EFFE

[5]

DINGLE R, 1978, APPL PHYS LETT, V37, P805

[6] MODULATION-DOPED HGCDTE QUANTUM-WELL STRUCTURES AND SUPERLATTICES [J].

HAN, JW ;

HWANG, S ;

LANSARI, Y ;

YANG, Z ;

COOK, JW ;

SCHETZINA, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02) :205-209

[7] MODULATION-DOPED HGCDTE [J].

HAN, JW ;

HWANG, S ;

LANSARI, Y ;

HARPER, RL ;

YANG, Z ;

GILES, NC ;

COOK, JW ;

SCHETZINA, JF ;

SEN, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02) :305-310

[8] GROWTH OF HGCDTE AND OTHER HG-BASED FILMS AND MULTILAYERS BY MOLECULAR-BEAM EPITAXY [J].

HARRIS, KA ;

HWANG, S ;

BLANKS, DK ;

COOK, JW ;

SCHETZINA, JF ;

OTSUKA, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2061-2066

[9] BAND-GAP-DEPENDENT ELECTRON AND HOLE TRANSPORT IN P-TYPE HGTE-CDTE SUPERLATTICES [J].

HOFFMAN, CA ;

MEYER, JR ;

BARTOLI, FJ ;

HAN, JW ;

COOK, JW ;

SCHETZINA, JF ;

SCHULMAN, JN .

PHYSICAL REVIEW B, 1989, 39 (08) :5208-5221

[10] A POSSIBLE RESOLUTION OF THE VALENCE-BAND OFFSET CONTROVERSY IN HGTE/CDTE SUPERLATTICES [J].

HUI, PM ;

EHRENREICH, H ;

JOHNSON, NF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02) :424-426