DETERMINATION OF HETEROJUNCTION MOBILITIES USING A NOVEL MAGNETIC FIELD-DEPENDENT HALL TECHNIQUE

[1] BECK WA, UNPUB J APPL PHYS

[2] BEER AC, 1963, SOLID STATE PHYS S, V4, P18

[3] 2-ELECTRON CONDUCTION IN N-TYPE HG1-XCDXTE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1052 - 1058

[4] HALL COEFFICIENT AND TRANSVERSE MAGNETORESISTANCE IN HGTE AT 4.2 DEGREES K AND 77 DEGREES K [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) : 1995 - &

[5] PROPERTIES OF P-TYPE INDIUM ANTIMONIDE .1. ELECTRICAL PROPERTIES [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (460): : 676 - 685

[6] HIRAKAWA H, 1986, SURFACE SCI, V170, P440

[7] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611

[8] KANE MJ, 1986, SURF SCI, V170, P470, DOI 10.1016/0039-6028(86)91006-X

[9] TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 274 - 277

[10] KEEVER MR, 1983, THESIS U ILLINOIS

[1] BECK WA, UNPUB J APPL PHYS

[2] BEER AC, 1963, SOLID STATE PHYS S, V4, P18

[3] 2-ELECTRON CONDUCTION IN N-TYPE HG1-XCDXTE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1052 - 1058

[4] HALL COEFFICIENT AND TRANSVERSE MAGNETORESISTANCE IN HGTE AT 4.2 DEGREES K AND 77 DEGREES K [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) : 1995 - &

[5] PROPERTIES OF P-TYPE INDIUM ANTIMONIDE .1. ELECTRICAL PROPERTIES [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (460): : 676 - 685

[6] HIRAKAWA H, 1986, SURFACE SCI, V170, P440

[7] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611

[8] KANE MJ, 1986, SURF SCI, V170, P470, DOI 10.1016/0039-6028(86)91006-X

[9] TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 274 - 277

[10] KEEVER MR, 1983, THESIS U ILLINOIS