A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter

被引：178

作者：

Broekaert, TPE ^{[1
]}

Brar, B ^{[1
]}

van der Wagt, JPA ^{[1
]}

Seabaugh, AC ^{[1
]}

Morris, FJ ^{[1
]}

Moise, TS ^{[1
]}

Beam, EA ^{[1
]}

Frazier, GA ^{[1
]}

机构：

[1] Raytheon Syst, Appl Res Labs, Dallas, TX 75265 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1998年 / 33卷 / 09期

关键词：

analog-digital conversion; FET's; indium compounds; quantization; resonant tunneling diodes; sample and hold circuits;

D O I：

10.1109/4.711333

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The combination of resonant-tunneling diodes and heterostructure field-effect transistors provides a versatile technology for implementing microwave digital and mixed-signal applications. Here we demonstrate and characterize the first monolithic flash analog-to-digital converter (ADC) in this technology. The first-pass ADC achieved 2.7 effective bits at 2 gigasamples per second (Gsps) for a 220-MHz input signal. The one-bit quantizer achieved a single-tone spurious free dynamic range greater than 40 dB at 2 Gsps for a 220-MHz single-tone input with dithering.

引用

页码：1342 / 1349

页数：8

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