Physics-based RTD current-voltage equation

被引：163

作者：

Schulman, JN ^{[1
]}

Santos, HJD ^{[1
]}

Chow, DH ^{[1
]}

机构：

[1] HUGHES SPACE & COMMUN CO,LOS ANGELES,CA 90009

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 05期

关键词：

D O I：

10.1109/55.491835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytic expression for the current-voltage characteristics of resonant tunneling diodes is derived from basic principles, The form is ideal for insertion into circuit simulation models, It is demonstrated for a conventional InGaAs/AlAs RTD and for an InAs/AlSb/GaSb RIT diode, The expression is based on the quantum tunneling formalism and contains parameters that originate from physical quantities, but which can also be treated as empirical, Empirical fitting is straightforward and results in an excellent match to the data, Additional levels of physical realism can be incorporated in a natural way.

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页码：220 / 222

页数：3

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