ANALYSIS OF 2ND LEVEL RESONANT TUNNELING DIODES AND TRANSISTORS

被引：31

作者：

SCHULMAN, JN

WALDNER, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 08期

关键词：

D O I：

10.1063/1.340940

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2859 / 2861

页数：3

相关论文

共 10 条

[1] IMPORTANCE OF SPACE-CHARGE EFFECTS IN RESONANT TUNNELING DEVICES
CAHAY, M
MCLENNAN, M
DATTA, S
LUNDSTROM, MS
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (10) : 612 - 614
[2] QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE
CAPASSO, F
SEN, S
GOSSARD, AC
HUTCHINSON, AL
ENGLISH, JH
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) : 573 - 576
[3] A RESONANT-TUNNELING BIPOLAR-TRANSISTOR (RBT) - A NEW FUNCTIONAL DEVICE WITH HIGH-CURRENT GAIN
FUTATSUGI, T
YAMAGUCHI, Y
IMAMURA, K
MUTO, S
YOKOYAMA, N
SHIBATOMI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (02): : L131 - L133
[4] DEPENDENCE OF TUNNELING CURRENT ON STRUCTURAL VARIATIONS OF SUPERLATTICE DEVICES
JOGAI, B
WANG, KL
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (02) : 167 - 168
[5] NEGATIVE DIFFERENTIAL RESISTANCE IN A STRAINED-LAYER-QUANTUM-WELL STRUCTURE WITH A BOUND-STATE
LEE, GS
HSIEH, KY
KOLBAS, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3453 - 3456
[6] RESONANT TUNNELING HOT-ELECTRON TRANSISTOR WITH CURRENT GAIN OF 5
MORI, T
OHNISHI, H
IMAMURA, K
MUTO, S
YOKOYAMA, N
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (26) : 1779 - 1780
[7] SELF-CONSISTENT ANALYSIS OF RESONANT TUNNELING CURRENT
OHNISHI, H
INATA, T
MUTO, S
YOKOYAMA, N
SHIBATOMI, A
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1248 - 1250
[8] RESONANT TUNNELING IN A GAAS/ALGAAS BARRIER/INGAAS QUANTUM-WELL HETEROSTRUCTURE
REED, MA
LEE, JW
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (13) : 845 - 847
[9] RESONANT INJECTION QUANTUM-WELL LASERS
SCHULMAN, JN
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (12) : 690 - 692
[10] GA1-XALXAS-GA1-YALYAS-GAAS DOUBLE-BARRIER STRUCTURES
SCHULMAN, JN
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) : 3954 - 3958