RESONANT TUNNELING IN A GAAS/ALGAAS BARRIER/INGAAS QUANTUM-WELL HETEROSTRUCTURE

被引:25
作者
REED, MA
LEE, JW
机构
关键词
D O I
10.1063/1.98009
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:845 / 847
页数:3
相关论文
共 12 条
[1]   RESONANT TUNNELING IN A GAAS1-XPX-GAAS STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURE [J].
GAVRILOVIC, P ;
BROWN, JM ;
KALISKI, RW ;
HOLONYAK, N ;
HESS, K ;
LUDOWISE, MJ ;
DIETZE, WT ;
LEWIS, CR .
SOLID STATE COMMUNICATIONS, 1984, 52 (03) :237-239
[2]  
GOLDMAN VJ, UNPUB
[3]   HIGH TRANSCONDUCTANCE INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].
KETTERSON, A ;
MOLONEY, M ;
MASSELINK, WT ;
PENG, CK ;
KLEM, J ;
FISCHER, R ;
KOPP, W ;
MORKOC, H .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :628-630
[4]   DETERMINATION OF THE INAS-GAAS(100) HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS) [J].
KOWALCZYK, SP ;
SCHAFFER, WJ ;
KRAUT, EA ;
GRANT, RW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :705-708
[5]   STRAINED-LAYER QUANTUM-WELL INJECTION-LASER [J].
LAIDIG, WD ;
CALDWELL, PJ ;
LIN, YF ;
PENG, CK .
APPLIED PHYSICS LETTERS, 1984, 44 (07) :653-655
[6]   ROOM-TEMPERATURE NEGATIVE DIFFERENTIAL RESISTANCE IN STRAINED-LAYER GAAS-ALGAAS-INGAAS QUANTUM-WELL HETEROSTRUCTURES [J].
LEE, GS ;
HSIEH, KY ;
KOLBAS, RM .
APPLIED PHYSICS LETTERS, 1986, 49 (22) :1528-1530
[7]   CONTINUOUS 300-K LASER OPERATION OF STRAINED SUPER-LATTICES [J].
LUDOWISE, MJ ;
DIETZE, WT ;
LEWIS, CR ;
CAMRAS, MD ;
HOLONYAK, N ;
FULLER, BK ;
NIXON, MA .
APPLIED PHYSICS LETTERS, 1983, 42 (06) :487-489
[8]   RESONANT MAGNETOTUNNELING IN GAALAS-GAAS-GAALAS HETEROSTRUCTURES [J].
MENDEZ, EE ;
ESAKI, L ;
WANG, WI .
PHYSICAL REVIEW B, 1986, 33 (04) :2893-2896
[9]   RESONANT TUNNELING THROUGH A DOUBLE GAAS/ALAS SUPERLATTICE BARRIER, SINGLE QUANTUM-WELL HETEROSTRUCTURE [J].
REED, MA ;
LEE, JW ;
TSAI, HL .
APPLIED PHYSICS LETTERS, 1986, 49 (03) :158-160
[10]  
REED MA, 1986, IN PRESS 18TH P INT