NEGATIVE DIFFERENTIAL RESISTANCE IN A STRAINED-LAYER-QUANTUM-WELL STRUCTURE WITH A BOUND-STATE

[1] ANDERSON NG, 1985, MATER RES SOC S P, V37, P223

[2] UNIFORMITY IN THE ELECTRICAL CHARACTERISTICS OF GAAS/ALAS TUNNEL STRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 307 - 309

[3] SEQUENTIAL RESONANT TUNNELING THROUGH A MULTIQUANTUM WELL SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1986, 48 (07) : 478 - 480

[4] Casey HC., 1978, HETEROSTRUCTURE LA B, P12, DOI 10.1016/B978-0-12-163102-4.50010-5

[5] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[6] SIMULATION OF RESONANT-TUNNELING HETEROSTRUCTURE DEVICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1261 - 1266

[7] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969

[8] RESONANT TUNNELING IN A GAAS1-XPX-GAAS STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURE [J]. SOLID STATE COMMUNICATIONS, 1984, 52 (03) : 237 - 239

[9] ELECTRON INTERFERENCE EFFECTS IN QUANTUM-WELLS - OBSERVATION OF BOUND AND RESONANT STATES [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (08) : 816 - 819

[10] ROOM-TEMPERATURE NEGATIVE DIFFERENTIAL RESISTANCE IN STRAINED-LAYER GAAS-ALGAAS-INGAAS QUANTUM-WELL HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1528 - 1530

[1] ANDERSON NG, 1985, MATER RES SOC S P, V37, P223

[2] UNIFORMITY IN THE ELECTRICAL CHARACTERISTICS OF GAAS/ALAS TUNNEL STRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 307 - 309

[3] SEQUENTIAL RESONANT TUNNELING THROUGH A MULTIQUANTUM WELL SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1986, 48 (07) : 478 - 480

[4] Casey HC., 1978, HETEROSTRUCTURE LA B, P12, DOI 10.1016/B978-0-12-163102-4.50010-5

[5] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[6] SIMULATION OF RESONANT-TUNNELING HETEROSTRUCTURE DEVICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1261 - 1266

[7] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969

[8] RESONANT TUNNELING IN A GAAS1-XPX-GAAS STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURE [J]. SOLID STATE COMMUNICATIONS, 1984, 52 (03) : 237 - 239

[9] ELECTRON INTERFERENCE EFFECTS IN QUANTUM-WELLS - OBSERVATION OF BOUND AND RESONANT STATES [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (08) : 816 - 819

[10] ROOM-TEMPERATURE NEGATIVE DIFFERENTIAL RESISTANCE IN STRAINED-LAYER GAAS-ALGAAS-INGAAS QUANTUM-WELL HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1528 - 1530