ANALYSIS OF HETEROJUNCTION BIPOLAR-TRANSISTOR RESONANT TUNNELING DIODE LOGIC FOR LOW-POWER AND HIGH-SPEED DIGITAL APPLICATIONS

被引：36

作者：

CHANG, CE

ASBECK, PM

WANG, KC

BROWN, ER

机构：

[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

[2] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 04期

关键词：

15;

D O I：

10.1109/16.202778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new high-speed digital logic family based on heterojunction bipolar transistors (HBT's) and resonant tunneling diodes (RTD's) is proposed. The negative differential resistance of RTD's is used to significantly decrease the static power dissipation. SPICE simulations indicate that propagation delay time below 150 ps at 0.09-mW static power per gate should be obtainable.

引用

页码：685 / 691

页数：7

共 15 条

[1]

Broekaert T. P. E., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P559, DOI 10.1109/IEDM.1989.74344

[2] PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE [J].