PREDICTED PERFORMANCE OF HIGH-SPEED INTEGRATED-INJECTION LOGIC USING INGAAS/INP HETEROJUNCTION BIPOLAR-TRANSISTORS

By the use of analytical expressions and SPICE simulation, the switching performance of integrated-injection logic (I2L) using heterojunction bipolar transistors (HBT's) has been investigated. A proposed inverter configuration using InP/InGaAs HBT's which avoids saturation in the p-n-p injector has predicted propagation delays of 16 ps at only 3-mW power dissipation. Transient response analysis illustrates the importance of reducing parasitic resistances in the structure. Ring oscillator simulations indicate that switching speeds, approaching those of emitter-coupled logic but with advantages in high density and low power are possible.