Heat treatment in high pressure H2O vapor used for improvement of Si-O bonding network near SiO2/Si interface

被引：9

作者：

Sameshima, T ^{[1
]}

Sakamoto, K ^{[1
]}

Satoh, M ^{[1
]}

机构：

[1] Tokyo A&T Univ, Koganei, Tokyo 1848588, Japan

来源：

THIN SOLID FILMS | 1998年 / 335卷 / 1-2期

关键词：

heat treatment; interfaces; silicon oxide; water;

D O I：

10.1016/S0040-6090(98)00887-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heat treatment with H2O vapor at a pressure of 5.4 x 10(6) Pa at 270 degrees C was applied to annealing thin thermally grown SiO2 and plasma oxidized lavers to improve the Si-O bonding network near the SiO2/Si interfaces. The heat treatment increased the Si-O-Si average bonding angle from 140.7 +/- 0.3 degrees to 142.5 +/- 0.3 degrees C near the interfaces for thermally grown SiO2 formed in dry oxygen at 100 degrees C and reduced the distribution of the angle. The increase of the Si-O-Si average bonding angle from 140.7 +/- 0.3 degrees to 143.8 +/- 0.3 degrees and the narrowing of the angle distribution were also observed for the 3-nm-thick plasma oxidized films. These results show that strain relaxation at the SiO2/Si interfaces was achieved at low temperature by the heat treatment. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：138 / 141

页数：4

共 9 条

[1] CORRELATION BETWEEN MIDGAP INTERFACE STATE DENSITY AND THICKNESS-AVERAGED OXIDE STRESS AND STRAIN AT SI SIO2 INTERFACES FORMED BY THERMAL-OXIDATION OF SI [J].