Fabrication of n-doped magnetic semiconductor heterostructures

被引：22

作者：

Smorchkova, I ^{[1
]}

Samarth, N ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 11期

关键词：

D O I：

10.1063/1.117442

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the introduction of high carrier densities into two and three-dimensional magnetic semiconductor heterostructures that contain large local concentrations of magnetic moments. The use of (ZnSe)(m-f)(MnSe)(f) digital alloys readily allows the fabrication of epilayer samples of moderate Mn composition with carrier concentrations up to similar to 10(19) cm(-3). Modulation doping of ZnSe/Zn1-x-yCdyMnxSe quantum wells enables the fabrication of a 2-D electron gas confined within the magnetic region with sheet concentrations up to similar to 6 x 10(11) cm(-2). (C) 1996 American Institute of Physics.

引用

页码：1640 / 1642

页数：3

共 13 条

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