I-V and C-V properties of TiO2 thin film by pulsed-laser reactive deposition

被引：5

作者：

Fu, ZW ^{[1
]}

Zhou, MF

Zhang, SK

Chen, LY

Qin, QZ

机构：

[1] Fudan Univ, Laser Chem Inst, Shanghai 200433, Peoples R China

[2] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

来源：

CHINESE SCIENCE BULLETIN | 1998年 / 43卷 / 16期

关键词：

TiO2; dielectric properties; electrical properties; pulsed-laser deposition;

D O I：

10.1007/BF02883679

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

TiO2 thin films have bee deposited on p-Si(lll) substrates by pulsed-laser ablation of metallic Ti target in the O-3 ambient. The current-voltage and capacitance-voltage of the Al/TiO2/Si capacitors are measured. The results show that the dielectric constant of thin film after being annealed at 700 degrees C is found to be 46, and the border trap density and the interface state density at the TiO2/p-Si interface are 1.8 x 10(12) cm(-2) and 2 x 10(12) eV(-1) cm(-2), respectively. The conduction mechanisms of as deposited films are also discussed.

引用

页码：1344 / 1349

页数：6

共 11 条

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