Extremely broadband InGaAsP/InP superluminescent diodes

被引：38

作者：

Wu, BR ^{[1
]}

Lin, CF

Laih, LW

Shih, TT

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei, Taiwan

[2] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei, Taiwan

[3] Chunghua Telecom Co Ltd, Telecommun Lab, Tao Yuan, Taiwan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 25期

关键词：

D O I：

10.1049/el:20001440

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Record broadband characteristics of superluminescent diodes (SLD) are reported. Using two 87 Angstrom In0.53Ga0.47As quantum wells and three 60 Angstrom In0.67Ga0.33As0.72P0.28 quantum wells, the fabricated SLDs exhibit a very broad emission spectrum. The spectral width is nearly 300nm, covering the range from 1300 to 1585.5nm.

引用

页码：2093 / 2095

页数：3

共 6 条

[1] OPTICAL GAIN AND GAIN SUPPRESSION OF QUANTUM-WELL LASERS WITH VALENCE BAND MIXING [J].