Experimental evidence of nonuniform carrier distribution in multiple-quantum-well laser diodes

被引：27

作者：

Lee, BL ^{[1
]}

Lin, CF

Lai, JW

Lin, W

机构：

[1] Natl Taiwan Univ, Inst Electroopt Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[3] Chung Hwa Telecom Co Ltd, Chungli, Taiwan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 12期

关键词：

D O I：

10.1049/el:19980838

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carrier distribution in multiple quantum wells is studied. Nonuniform carrier distribution is evidenced by the lasing characteristics of laser diodes with multiple quantum wells of different widths. It is shown that the well sequence significantly influences the threshold current and the characteristic temperature owing to nonuniform carrier distribution.

引用

页码：1230 / 1231

页数：2

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