ON CARRIER INJECTION AND GAIN DYNAMICS IN QUANTUM-WELL LASERS

被引:154
作者
TESSLER, N
EISENSTEIN, G
机构
[1] Advanced Optoelectronics Center, Department of Electrical Engineering, Technion—Israel Institute of Technology, Haifa
关键词
D O I
10.1109/3.234409
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a detailed carrier dynamics model for quantum well lasers. The model describes the transport of carriers using full continuity equations, gain by rate equations for each well separately, and it also takes into account electron-hole interactions which modify the energy band structure. To this end, the model includes Poisson and Schrodinger equations. The model is solved in steady state where it yields nonuniform carrier distributions along the crystal growth axis. Dynamically, the model is solved in the time domain, yielding the evolution of carriers in time and space and highlighting a new effect, photon-assisted carrier transport. The model is also solved in the small-signal regime where the phase lag in gain between wells is determined.
引用
收藏
页码:1586 / 1595
页数:10
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