Extremely broadband AlGaAs/GaAs superluminescent diodes

被引：77

作者：

Lin, CF ^{[1
]}

Lee, BL ^{[1
]}

机构：

[1] NATL TAIWAN UNIV,DEPT ELECT ENGN,TAIPEI 10764,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 12期

关键词：

D O I：

10.1063/1.119844

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Extremely broadband AlGaAs/GaAs superluminescent diodes are fabricated on substrate with four quantum wells of different widths. By choosing 20, 33, 56, and 125 Angstrom, respectively, for the four quantum wells, the spectrum could be broadened to several times that of the conventional superluminescent diodes. The measured spectra of the fabricated devices with such quantum-well structure show that the full-width at half-maximum spectral width could be as large as 915 Angstrom. (C) 1997 American Institute of Physics.

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页码：1598 / 1600

页数：3

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