SUPERLUMINESCENT DIODES WITH ANGLED FACET ETCHED BY CHEMICALLY ASSISTED ION-BEAM ETCHING

被引：18

作者：

LIN, CF

机构：

[1] School of Electrical Engineering, Cornell University, Ithaca

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 11期

关键词：

DIODES; LUMINESCENT DEVICES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19910604

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A superluminescent diode with very low spectral modulation has been made with one cleaved facet and one angled facet etched by chemically assisted ion beam etching. Without antireflection coating, the reflection of light back into the waveguide from the etched angled facet is less than 1 x 10(-5). In addition, 85% of the total output power can be coupled from the etched angled facet without applying any anti-reflection or high-reflection coating on either facet.

引用

页码：968 / 970

页数：3

共 6 条

[1] HIGH-POWER SUPERLUMINESCENT DIODES [J].