Broad-band superluminescent diodes fabricated on a substrate with asymmetric dual quantum wells

被引：50

作者：

Lin, CF ^{[1
]}

Lee, BL ^{[1
]}

Lin, PC ^{[1
]}

机构：

[1] NATL TAIWAN UNIV,DEPT ELECT ENGN,TAIPEI 106,TAIWAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 11期

关键词：

D O I：

10.1109/68.541548

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Broad-band AlGaAs-GaAs superluminescent diodes are fabricated using asymmetric dual quantum wells. With a proper design of the quantum-well structure, the spectral width of the superluminescent diodes could be engineered. By choosing 40 Angstrom and 75 Angstrom, respectively, for the two quantum wells, the spectrum remains bell-shaped and is broadened to 2 similar to 3 times that of the conventional superluminescent diodes. The measured spectra show that there is no obvious preference on the transition in either well at any pumping current.

引用

页码：1456 / 1458

页数：3

共 8 条

[1] HIGH-POWER SUPERLUMINESCENT DIODES [J].