VERY WIDE SPECTRUM MULTIQUANTUM WELL SUPERLUMINESCENT DIODE AT 1.5-MU-M

被引：25

作者：

KONDO, S ^{[1
]}

YASAKA, H ^{[1
]}

NOGUCHI, Y ^{[1
]}

MAGARI, K ^{[1
]}

SUGO, M ^{[1
]}

MIKAMI, O ^{[1
]}

机构：

[1] UNIV TOKYO, ADV SCI & TECHNOL RES CTR, MEGURO KU, TOKYO 153, JAPAN

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 02期

关键词：

LUMINESCENT DEVICES; DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InGaAs/InGaAsP multiquantum well superluminescent diode (SLD) emitting at 1.5-mu-m has been studied. Broad spectral widths exceeding 100 nm are achieved under a wide injection current range. The maximum spectral width is 170 nm, which gives a calculated coherence length of 13-mu-m, approximately one third that of 1.5-mu-m conventionally available bulk SLDs.

引用

页码：132 / 133

页数：2

共 7 条

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