BROADER SPECTRAL WIDTH INGAASP STACKED ACTIVE LAYER SUPERLUMINESCENT DIODES

被引：32

作者：

MIKAMI, O

YASAKA, H

NOGUCHI, Y

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi 243-01

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 11期

关键词：

D O I：

10.1063/1.102571

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fabrication and characteristics of broader spectral width 1.3 μm and 1.5 μm InGaAsP superluminescent diodes having a novel stacked active layer (STAC-SLDs) structure are reported. The emission spectral width is successfully broadened as much as twice that of conventional SLDs, yielding spectral widths of 80 and 140 nm for the 1.3 μm and the 1.5 μm SLD, respectively.

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页码：987 / 989

页数：3

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