HIGH-POWER, HIGH-EFFICIENCY WINDOW BURIED HETEROSTRUCTURE GAALAS SUPERLUMINESCENT DIODE WITH AN INTEGRATED ABSORBER

被引：21

作者：

KWONG, NSK

LAU, KY

BARCHAIM, N

URY, I

LEE, KJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 23期

关键词：

D O I：

10.1063/1.98498

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1879 / 1881

页数：3

共 14 条

[1]

ALPHONES GA, 1987, JAN OPT FIB COMM C R

[2]

BURNS WK, 1983, J LIGHTWAVE TECHNOL, V1, P98

[3] OPTICAL-PROPERTIES OF A GAALAS SUPERLUMINESCENT DIODE [J].

DUTTA, NK ;

DEIMEL, PP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (04) :496-498

[4] ANTIREFLECTION COATINGS ON SEMICONDUCTOR-LASER FACETS USING SPUTTERED LEAD SILICATE GLASS [J].

EISENSTEIN, G ;

STULZ, LW ;

VANUITERT, LG .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1986, 4 (09) :1373-1375

[5]

Eisenstein G, 1984, Appl Opt, V23, P161, DOI 10.1364/AO.23.000161

[6]

EPWORTH RE, 1978, 4TH P EUR C OPT COMM, P492

[7] BISTABILITY AND PULSATIONS IN CW SEMICONDUCTOR-LASERS WITH A CONTROLLED AMOUNT OF SATURABLE ABSORPTION [J].

HARDER, C ;

LAU, KY ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :382-384

[8] LATERAL CONFINEMENT INGAASP SUPERLUMINESCENT DIODE AT 1.3 MU-M [J].

KAMINOW, IP ;

EISENSTEIN, G ;

STULZ, LW ;

DENTAI, AG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (01) :78-82

[9] MEASUREMENT OF THE MODAL REFLECTIVITY OF AN ANTI-REFLECTION COATING ON A SUPERLUMINESCENT DIODE [J].

KAMINOW, IP ;

EISENSTEIN, G ;

STULZ, LW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (04) :493-495

[10] 11-GHZ DIRECT MODULATION BANDWIDTH GAAIAS WINDOW LASER ON SEMIINSULATING SUBSTRATE OPERATING AT ROOM-TEMPERATURE [J].

LAU, KY ;

BARCHAIM, N ;

URY, I ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :316-318

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