HIGH-POWER, HIGH-EFFICIENCY 1.3-MU-M SUPERLUMINESCENT DIODE WITH A BURIED BENT ABSORBING GUIDE STRUCTURE

被引：43

作者：

NAGAI, H ^{[1
]}

NOGUCHI, Y ^{[1
]}

SUDO, S ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 18期

关键词：

D O I：

10.1063/1.101292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1719 / 1721

页数：3

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