1.5-MU-M INGAASP/INP BURIED CRESCENT SUPERLUMINESCENT DIODE ON A P-INP SUBSTRATE

被引：8

作者：

CHEN, TR ^{[1
]}

ZHUANG, YH ^{[1
]}

XU, YJ ^{[1
]}

YARIV, A ^{[1
]}

KWONG, NS ^{[1
]}

机构：

[1] ORTEL CORP,ALHAMBRA,CA 91803

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 25期

关键词：

D O I：

10.1063/1.102871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An InGaAsP/InP superluminescent diode (SLD) emitting at 1.54 μm has been fabricated. The device uses a buried crescent structure on a p-InP substrate. The parameters were optimized for high output power, small spectral modulation, and smooth far-field operation. The coherence function of the SLD emission was studied systematically. An output power of 5 mW, a coherence length of 41 μm, and a second coherence peak suppression ratio of 22 dB were obtained.

引用

页码：2502 / 2503

页数：2

共 9 条

[1]

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[2] THE EFFECTS OF LOSS AND NONRADIATIVE RECOMBINATION ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN 1.5-1.6-MU-M GALNASP/INP LASERS [J].