80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax

被引：11

作者：

Koester, SJ ^{[1
]}

Saenger, KL ^{[1
]}

Chu, JO ^{[1
]}

Ouyang, QC ^{[1
]}

Ott, JA ^{[1
]}

Rooks, MJ ^{[1
]}

Canaperi, DF ^{[1
]}

Tornello, JA ^{[1
]}

Jahnes, C ^{[1
]}

Steen, SE ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 23期

关键词：

D O I：

10.1049/el:20031082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

DC and RF performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapour deposition is reported. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70nm) displayed f(max)=194 GHz (175 GHz) and f(T)=70 GHz (79 GHz).

引用

页码：1684 / 1685

页数：2

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