High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD

被引:25
作者
Koester, SJ
Chu, JO
Groves, RA
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
[2] IBM Corp, Microelect Div, Hopewell Junction, NY 12533 USA
关键词
D O I
10.1049/el:19990075
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors present high-frequency results of n-channel MODFETs fabricated on high-mobility Si/SiGe strained layer heterostructures grow by ultrahigh vacuum chemical vapour deposition (UHV-CVD). DL vices with gate length L-g = 0.2 mu m and drain-source separation L-ds = 0.9 mu m displayed unity current gain cutoff frequencies as high as f(T) = 45GHz (47GHz) at V-ds = +0.6V (+1.5V). Similar devices with L-g = 0.2 mu m and L-ds = 0.5 mu m produced values of f(T) = 61GHz (62GHz) at V-ds = + 0.6V (+1.0V). The value f(T) = 62GHz is the highest unity current gain cutoff frequency reported to date for an,n-channel strained Si MODFET.
引用
收藏
页码:86 / 87
页数:2
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