Electron localization determines defect formation on ceria substrates

被引:1247
作者
Esch, F [1 ]
Fabris, S
Zhou, L
Montini, T
Africh, C
Fornasiero, P
Comelli, G
Rosei, R
机构
[1] INFM, Lab Nazl Tecnol Avanzate & Nanosci, I-34012 Trieste, Italy
[2] SISSA, I-34014 Trieste, Italy
[3] INFM, Democritos Natl Simulat Ctr, I-34014 Trieste, Italy
[4] Leibniz Univ Hannover, Inst Phys Chem & Electrochem, D-30167 Hannover, Germany
[5] Univ Trieste, Dept Chem, I-34127 Trieste, Italy
[6] Univ Trieste, Consorzio Interuniv Nazl Sci & Tecnol Mat, I-34127 Trieste, Italy
[7] Univ Trieste, CENMAT, I-34127 Trieste, Italy
[8] Univ Trieste, Dept Phys, I-34127 Trieste, Italy
关键词
D O I
10.1126/science.1111568
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The high performance of ceria (CeO(2)) as an oxygen buffer and active support for noble metals in catalysis relies on an efficient supply of lattice oxygen at reaction sites governed by oxygen vacancy formation. We used high-resolution scanning tunneling microscopy and density functional calculations to unravel the local structure of surface and subsurface oxygen vacancies on the (111) surface. Electrons left behind by released oxygen localize on cerium ions. Clusters of more than two vacancies exclusively expose these reduced cerium ions, primarily by including subsurface vacancies, which therefore play a crucial role in the process of vacancy cluster formation. These results have implications for our understanding of oxidation processes on reducible rare-earth oxides.
引用
收藏
页码:752 / 755
页数:4
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