InGaN/GaN/AlGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours (Reprinted from Materials Research Society Proceedings, vol 482, 1997)

被引：44

作者：

Nakamura, S ^{[1
]}

机构：

[1] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 774, Japan

来源：

MRS BULLETIN | 1998年 / 23卷 / 05期

关键词：

D O I：

10.1557/S0883769400030414

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：37 / +

页数：6

共 20 条

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